Video
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Description
The project develops and validates a chemical, non-mechanical cleaning process to obtain imaging-grade, epitaxy-ready GaAs for small (<1 inch) photocathode wafers used in infrared and night vision equipment.
The Achievable Results
An in-situ spectroscopic ellipsometry method will be created and developed, supported by atomic force microscopy and X-ray photoelectron spectroscopy measurements, with regard to the control process and its parameter boundary values.
The Anticipated Benefit
The project will result in the creation of a cleaning and drying process, as well as initial design for future industrial equipment.
The Allocated Funding
160,000 EUR on 03/01/2026.
Team
Dr. phys. Laima Trinklere
Senior Researcher Gallery
